Study of a GaN Schottky diode based hydrogen sensor with a hydrogen peroxide oxidation approach and platinum catalytic metal - ScienceDirect
Electronics | Free Full-Text | Device Design Assessment of GaN Merged P-i-N Schottky Diodes | HTML
MBE grown GaN/AlGaN lateral Schottky barrier diodes for high frequency applications: Journal of Vacuum Science & Technology B: Vol 34, No 2
I-V characteristics of GaN Schottky diode at different temperatures in... | Download Scientific Diagram
Switching performance of quasi-vertical GaN-based p-i-n diodes on Si
Charged EVs | SiC vs GaN semiconductors for EV power converters: Tech Opinion - Charged EVs
OSA | Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection
Passivation effect of graphene on AlGaN/GaN Schottky diode - RSC Advances (RSC Publishing)
a), (b) Two vertical structures of Schottky diode fabricated on GaN... | Download Scientific Diagram
Switching performance of quasi-vertical GaN-based p-i-n diodes on Si
Recovery Performance of Ge-Doped Vertical GaN Schottky Barrier Diodes | Nanoscale Research Letters | Full Text
Temperature dependent electrical characterisation of Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) Schottky diodes: AIP Advances: Vol 5, No 9
PTC Website
GaN two-terminal devices, High-breakdown Schottky diodes - III-nitride semiconductors and their modern devices
Graphene-GaN Schottky diodes | SpringerLink
Gallium nitride vertical junction barrier Schottky diodes
Electrical properties and carrier transport mechanism in V/p-GaN Schottky diode at high temperature range - ScienceDirect
Hydrogen sensors using nitride-based semiconductor diodes: the role of metal/semiconductor interfaces. - Abstract - Europe PMC
Obliterating dynamic on-resistance degradation - News
Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics. - Abstract - Europe PMC
A Seriously High-Power Gallium Nitride Diode | Engineering.com
IQE, imec make 650V GaN-on-Si diodes on 200mm wafers
Increasing GaN Schottky diode breakdown voltage with recessed double-field plate anode
